Description
Description
MOCVD Graphite Susceptor is a critical component within Metal-Organic Chemical Vapor Deposition (MOCVD) systems. It serves as a high-temperature, thermally conductive platform designed to securely hold and uniformly heat semiconductor substrates during the epitaxial growth of thin films.
packing and delivery
Wooden box package
feature
- Excellent thermal conductivity for rapid and uniform heat transfer
- High mechanical strength and dimensional stability under extreme conditions
- Smooth, precisely machined surface for stable substrate placement
- Designed to influence gas flow dynamics and thermal gradients
advantage
- Ensures uniform film thickness and superior crystalline quality in the epi-layer
- Enables high process repeatability and yield through stable substrate temperature control
- Extends service life and reduces particle contamination due to corrosion resistance
- Maintains structural integrity despite repeated thermal cycles, ensuring process reliability
application
- Primarily used in MOCVD reactors for the epitaxial growth of compound semiconductor layers (e.g., GaN, GaAs, InP) on substrates such as silicon, silicon carbide, or sapphire.
- Essential for manufacturing optoelectronic devices (LEDs, laser diodes) and radio-frequency (RF) power semiconductors.
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